The new DDR5 standard RAM memories have been launched relatively recently, which have many improvements over DDR4. Among other things, they double the operating frequencies, reduce consumption or Dual Channel in a single module. Well, the manufacturer SK Hynix just announced the first 16GB DDR5 chip of the industry manufactured in the node 1c.
Among the main features of DDR5, we have a minimum bandwidth of 4,800 MT/s. The memory chips offer greater density, being able to build modules of up to 512 GB of capacity. Additionally, they allow the creation of independent subchannels, being able to create two 32-bit subchannels and thus create a Dual Channel configuration with a single module.
Specifically, to achieve 512 GB per module (for Data Centers) various optimizations and improvements in the manufacturing processes of DRAM chips are required. Something that is not exactly simple, but, as we will see, is being achieved.
SK Hynix improves manufacturing process for DDR5
Currently, the manufacturer SK Hynix is one of the most prominent manufacturers of DRAM chips for RAM memoriesThey have just announced the development of the industry’s first 16Gb DDR5 chip under the 1c node, the sixth generation of the 10nm process.
You should know that the process shrinkage for DRAM memory in the 10nm range has been increasing with each generation. Thanks to its constant innovation and development, SK Hynix is the first in the industry to successfully move away from the 1b process, the fifth generation of the 10nm process.
The company claims to be ready to mass produce DDR5 memory using the 1c process, which would go on sale next year.
SK Hynix explains that errors resulting from such an advanced process are quite likely during manufacturing. To overcome this problem, they have transferred the advantages of the 1b process to this new 1c process.
The successful implementation of this new process has allowed for improved cost competitiveness compared to the previous generation. This has been possible by adopting a new material in certain EUV processes, as well as optimising the entire lithography process. They also highlight an improvement in productivity of over 30% thanks to innovations in design.
They also comment that the operating speed of DDR5 memories under the 1c process, intended for high-performance Data Centers, has improved by 11% compared to the previous generation, reaching 8 Gbps. They also highlight an improvement in energy efficiency of around 9%.
SK Hynix estimates that using 1c DDR5 memory modules can help data centers reduce energy costs by up to 30%. This is great, especially given the huge advances in artificial intelligence, which have led to huge increases in energy consumption.
Not only will the 1c process be used for DDR5 memory, SK Hynix is actually already looking to the future with this process. They emphasize that it will be used for all types of DRAM memory, such as HBM, LPDDR6 and GDDR7.