Samsung has marked as a goal create 1,000 layers facing 2030 based on its “multi-BV” design.
Samsung has just begun the union of 400 -layer wafers
According to information from The Bellthe South Korean company is very clear about its objective for 2030, and has a very clear plan for it. According to the sources, the intention is to stack four wafers together to overcome the structural limits we see today, with the intention of create 1,000 layers.
The CTO of the Samsung Electronics DS Division, Song Jae-Hyuk, said at the time that The union of wafers It allows the separate production of peripheral and cellular wafers before joining them in a semiconductor, which facilitates manufacturing.
From the environment we have cited, they venture to point out that the first appearance of this technology will be with the Nand of tenth generation of Samsung (V10)although experts believe that a single wafer can reach 500 NAND layers by implementing them only in cellular structures.
Apparently, the company's plan consists of working with the Chinese and MTC company, in order to work with its hybrid union patent for the next Samsung NAND. As it seems, the production of the NAND V10 will begin during The second half of 2025with the aim of reaching 420-430 layers.
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On the other hand, The Bell also points out that another of Samsung's plans is the Cold engraving with molybdenumwhich will play a fundamental role in the next generation of the company, and that it should be a key element to achieve the objective for 2030.
